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Vice Chancellor

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Professor M. M. Shahidul Hassan, PhD

Professor M. M. Shahidul Hassan, PhD

Vice Chancellor

Address: A/2, Jahurul Islam Avenue Jahurul Islam City | Aftabnagar Dhaka-1212 | Bangladesh

9666775577

shahidul@ewubd.edu, vc@ewubd.edu

Welcome to East West University (EWU), where excellence is nurtured, pursued, and celebrated. I am proud to have become the Vice-chancellor of this university. From its establishment in 1996, over the years, EWU has increased many folds in every respect but there is no limit to improvements and advancement. As a Vice-Chancellor my foremost tasks is to find weaknesses we have as an institution and identify the challenges facing us. Once we shall identify those we can strive to overcome them and mark our place as the best academic institution in the country in the coming years. We really want to transform EWU into a university that will engage in making EWU as a lavish garden of knowledge, producing outstanding graduates and undertaking relevant research recognized nationally and internationally. I hope we shall be able to work on this journey of excellence, placing EWU among top-ranked universities. Our 9,000-plus students are engaged in more than 11 bachelor’s degree programs and 12 masters programs which foster curiosity, critical thinking, innovation, and professional skills. EWU’s academic and career opportunities are balanced with a campus lifestyle that is second-to-none among private universities in Bangladesh. EWU houses various sports, cultural, and social clubs to cater to the extra-curricular activities of the students. All of these elements – outstanding teaching, scholarships, support, flexibility and choice in programs and extra-curricular benefits – come together to create the EWU advantage. Whether you join us from across the campus, or from the other side of the world, I am proud to welcome you to our EWU Family.

Professor M. M. Shahidul Hassan, PhD

Never mind how many times you fail. Try Try again.

Education 

Ph. D. in Electronics, 1989, Dept. of Electrical & Computer Engineering (ECE), Clarkson University, New York, USA.
M. Sc Engineering in Electrical & Electronics Engineering, Dept. of Electrical & Electronics Engineering (EEE), Bangladesh University of Engineering & Technology (BUET), Dhaka-1000, Bangladesh.
B. Sc. Engineering in Electrical Engineering, Dept. of Electrical Engineering, BUET, Dhaka1000, Bangladesh, 1974 (Session 1968-72)
Higher Secondary Certificate (HSC) Examination (Science Group), 1968
Secondary School Certificate (SSC) Examination (Science Group), 1966


Employment History 

Teaching at Bangladesh University of Engineering and Technology (BUET), Dhaka 

Served Dept. of EEE, BUET for 36 years.
Retired as Professor in 2016

Teaching abroad 

    USA 

        Visiting Professor Summer school – 2005, 2004, 2003 and 2002
        Dept. of ECE, Clarkson University, Potsdam, New York

    Saudi Arabia and Malaysia 

        King Fahd University of Petroleum & Minerals (KFUPM), Dharan, Saudi Arabia
        University of TELEKOM (now known as Multimedia University), Malacca, Malaysia


Last Five Positions Held 

  1. Dean, Faculty of Electrical and Electronic Engineering (EEE), Bangladesh University of Engineering & Technology (BUET), Dhaka, Bangladesh, August 2003- June 2005.
  2. Head, Dept. of EEE, BUET, Dhaka, Bangladesh, August 2001- May 2003
  3. Part-time member of Bangaldesh University Grant Commission (UGC), Agargaon, Dhaka, Bangaldesh, 2003-2005.
  4. Director, DESCO Board, 2009-2012
  5. Professor and Senate Member, Multimedia University, Malaysia, 1997-1999
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International Journals:

Area: Electronic Devices

  1. Yeasir Arafat , Farseem M. Mohammedy , M. M. Shahidul Hassan, “Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors,” International Journal of Optoelectronic Engineering, Vol. 2, No. 2, pp. 5-11, 2012. 
  2. M M Shahidul Hassan, Orchi Hassan and Md. Iqbal Bahar Chowdhury, “Effect of Majority Carrier Current on the Base Transit Time of A BJT,” Journal of Electron Devices ,Vol. 10, pp. 511-514, 2011. 
  3. M M Shahidul Hassan and Orchi Hassan, “Minority Carrier Profile and Storage Time of a Nonuniformly Doped n-Si Schottky Barrier Diode,” Journal of Electron Devices, Vol. 11, pp. 609-615, 2011. 
  4. M M Shahidul Hassan and Orchi Hassan, “Depletion Layer of a Nonuniformly Doped Schottky barrier Diode,” Journal of Electron Devices, Vol. 14, pp. 1151-1154, 2012. 
  5. M. M. Shahidul Hassan and Md. Waliullah Khan, “Base Transit Time Model Considering Field Dependent Mobility for BJTs Operating at High-Level Injection,” IEEE Trans. On Electron Devices, Vol. 53, No. 10, pp. 2532-2539, Oct., 2006. 
  6. M. M. Shahidul Hassan, Ziaur Rahman Khan and Md. Touhidur Rahman, “Base Transit Time of a Bipolar Transistor considering Field Dependent Mobility,” International Journal of Electronics, Vol. 93, No. 11, pp. 723-735 November 2006. 
  7. M. M. Shahidul Hassan, Touhidur Rahman and Md. Ziaur Rahman Khan,“Analytical model for base transit time of a bipolar transistor with Gaussian doped base,” Solid-State Electron.,Vol. 50, No. 3, pp. 327-332 , 2006. 
  8. Md. Anwarul Abedin and Dr. M. M. Shahidul Hassan, “Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” Journal of The Institution of Engineers, Singapore, Vol. 45, Issue 5, 2005. 
  9. Md. Anwarul, Abedin and M. M., Shahidul Hassan, Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect, The Journal of the Institution of Engineers, Malaysia, vol. 66(3), 2005, pages 42-46. 
  10. Md. Z. R. and M.M.S. Hassan and T.Rahman and A. k. M. Ahsan, “Expression for Base Transit Time in Bipolar Transistors,” Int. J. Electronics, Vol. 92, No. 4, pp. 215-229, April 2005. 
  11. M. M. Shahidul Hassan , A. H. M. A. Rahim ,“Induced Base Transit Time of an Epitaxial n+ pnn + Bipolar Transistor in Saturation,” Solid-State Electronics,Vol. 47,No.6, pp. 943-950, 2003. 
  12. M. M. Shahidul Hassan,“Base Transit Time of an Epitaxial n+ pnn + Bipolar Transistor Considering Kirk Effect,” Int. J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332, 2003. 
  13. M. M. Shahidul Hassan and S. Hasibul Majid, “Electrical Characteristics of an Epitaxial Schottky Barrier Diode,” International Journal of Electronics, Vol. 88, No. 9, pp. 957- 967, 2001. 
  14. M. M. Shahidul Hassan and A. H. Khondoker, “New Expression for Base Transit Time in a Bipolar Transistor for all levels of Injection, ”Microelectronics and Reliability, Vol. 41, No. 1, pp. 137-140, 2001. 
  15. M. M. Shahidul Hassan, “Analytical Base Transit Time of Integrated Bipolar Transistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000. 
  16. M. M. Shahidul Hassan, “Characteristics of Epitaxial Schottky Barrier Diode for all Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000. 
  17. M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a Bipolar Transistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol.86, No.1, pp. 1-14, 1999. 
  18. M. M. Shahidul Hassan and M. A. Choudhury, “New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,” IEE Proc. – Circuits, Devices and Systems, Vol. 142, No.2, pp. 113-119, 1995. 
  19. M. M. Shahidul Hassan and Md. Aynal Haque, “Evaluation of Optimal Collector Parameters of a Transistor with Burried Layer,” Int. J. Electronics, Vol. 75, No. 3, pp. 437-440, 1993. 
  20. M. M. Shahidul Hassan, Golam Rasul Chowdhury and Zahirul Alam,“Breakdown Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics, Vol. 34, No. 10, pp. 1109-1111, 1991. 
  21. M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics (IJE), Vol. 71, No. 5, pp. 745-755, 1991. 
  22. M. M. Shahidul Hassan and A. Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,” IJE Vol.71, No.3, pp. 403- 409, 1991. 
  23. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991. 
  24. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base Collector Junctions of High-Voltage Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991. 
  25. M. M. Shahidul Hassan and H. Domingos, “Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991. 
  26. M. M. Shahidul Hassan and H. Domingos, “Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533-537, 1990. 
  27. M. M. Shahidul Hassan and H. Domingos, “Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989. 
  28. M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989. 
  29. M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989. 

Area : Higher Education

  1. M. M. Shahidul Hassan and Omiya Hassan, “The Importance of Changing the Traditional Mode of Higher Education in Bangladesh: Creating Huge Job Opportunities for Home and Abroad,”International Journal of Humanities and Social Sciences, Vol : 13, No:6, 2019. 
  2. M. M. Shahidul Hassan, “Revamping Higher Education in Bangladesh,” International Journal of Management and Applied Science (IJMAS) , pp. 53-55, Volume-2,Issue-12, 2017. 
  3. M M Shahidul Hassan, “ On Challenges of Implementing Outcome Based Engineering Education in Universities in Bangladesh”, JPU, 20-22 Dec. 2012, pp. 362 - 364 


National Journals 

Area: Electronic Devices

  1. Yeasir Arafat, Md. Jannatul Ferdous and M . M. Shahidul Hassan, “ Effect of Temperature on the Fill Factor of a Heterojunction (CIGS) Solar Cell,” JIEB, Vol. EE 38, No. 11, Dec.2012. 
  2. M M Shahidul Hassan, Orchi Hassan and Md. Azharul Haque, “Minority Carrier Profile and Storage Time of a Schottky Barrier Diode for All levels of injection,” JIEB, Vol 37, No 2, pp. 15-21, 2011. 
  3. Md.Waliullah Khan Nomani and M. M. Shahidul Hassan , “A New model of base transit time for BJTs operating at high level of injection,” JIEB, 2006. 
  4. M. M. Shahidul Hassan and M. Azharul Haque, “Base Transit Time of a High Speed NPN Transistor Considering Hole current,” JIEB, Vol. EE 33, No. 1& II, pp. 120-124, Decber 2006. 
  5. Touhidur Rahman, Md. Ziaur Rahman Khan, Hassan MMS, “Base Transit Time of a Bipolar Transistor with Gaussian Base Doping Profile", IEB Journal of Electrical Engineering, Vol. EE 31, No. I & II), pp. 6 - 9, Dec 2004 
  6. Md. Aynal Haque and M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,” JIEB, Vol. EE 27, No. 1, pp. 57-61, 1999. 
  7. Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination of Excited Energy States of Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67, 1996. 
  8. Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol. EE24, pp.19-26, 1996. 
  9. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of Second Breakdown on Load Inductance and Reverse Base Drive,” JIEB, Vol. EE23, pp. 29-36, 1995. 
  10. Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995. 
  11. M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222, 1994. 
  12. M. M. Shahidul Hassan and G.. R. Choudhury, “Effect of Doping on Efficiency of MIS Inversion Layer Solar Cells,"JIEB, Vol. 20, pp. 33-39, 1992. 
  13. M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB, Vol. 20, No. 3, pp. 29-35, 1992. 
  14. M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34,1990. 
  15. M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the CurrentGain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993. 
  16. M. M. Shahidul Hassan, “Evaluation of Optimal Values of Double-Graded Collector Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992. 
  17. M. M. Shahidul Hassan and M. Sohel Imtiaz, “Current- Voltage Characteristics of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES,Vol.1, No. 1, pp. 17-23, 1991. 
  18. M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES,Vol. 1, No. 1, pp. 27-30, 1991.
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Awards and Memberships 

Asia Education Leadership Award 2016, 7th CMO Asia Award for Excellence in Branding and Marketing.
Excellent paper Award 2016 for the paper entitled “Revamping Higher Education in Bangladesh”, International Society for Engineering Research and Development (ISERD)
Excellent Paper Presentation Award 2016, International Institute of Engineers and Researchers (IIER)
Special Honor in recognition to education, 7 May 2015, Dhaka Center, IEB BAS Gold Award2007(Senior Group), Bangladesh Academy of Sciences
IEB best paper award 2005
Bangladesh University Grants Commission Award 1991, 199, 2003 and 2005 for best research paper
Best Teaching award 1998, University of Telekom (renamed: Multimedia university of Malaysia), Malacca, Malaysia
Associate Award of Dr. Abdus Salam’s International Center for Theoretical Physics(ICTP), Trieste, Italy, for six years from 1994-1999

Fellow Institute of Engineers, Bangladesh
Fellow Bangladesh Computer Society
Member (Founder) Bangladesh Electronic Society
Member IEEE, USA
Member Secretary Board of Accreditation for Engineering and Technical Education (BAETE), 2006-2016
Member Editorial Board, J. Bangladesh Electronics Society (JBES), 1993-1996


Journal Reviewer and Editorships 

Editorial Board for Journal Electronic Society, Bangladesh Editorial Board for IEB Journal, IEB, Bangladesh
Reviewer: Int. J. Electronics, 1995-1996
International Journal of Bangladesh Electronics Society (JBES)
Journal of Institute of Engineers (JIEB), Bangladesh
                Arabian Journal for Science and Engineering, Saudi Arabia

Supervision of Graduate Theses 

Masters’: twenty five
Ph.D.: One

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International Journals:

Area: Electronic Devices

  1. Yeasir Arafat , Farseem M. Mohammedy , M. M. Shahidul Hassan, “Optical and Other Measurement Techniques of Carrier Lifetime in Semiconductors,” International Journal of Optoelectronic Engineering, Vol. 2, No. 2, pp. 5-11, 2012. 
  2. M M Shahidul Hassan, Orchi Hassan and Md. Iqbal Bahar Chowdhury, “Effect of Majority Carrier Current on the Base Transit Time of A BJT,” Journal of Electron Devices ,Vol. 10, pp. 511-514, 2011. 
  3. M M Shahidul Hassan and Orchi Hassan, “Minority Carrier Profile and Storage Time of a Nonuniformly Doped n-Si Schottky Barrier Diode,” Journal of Electron Devices, Vol. 11, pp. 609-615, 2011. 
  4. M M Shahidul Hassan and Orchi Hassan, “Depletion Layer of a Nonuniformly Doped Schottky barrier Diode,” Journal of Electron Devices, Vol. 14, pp. 1151-1154, 2012. 
  5. M. M. Shahidul Hassan and Md. Waliullah Khan, “Base Transit Time Model Considering Field Dependent Mobility for BJTs Operating at High-Level Injection,” IEEE Trans. On Electron Devices, Vol. 53, No. 10, pp. 2532-2539, Oct., 2006. 
  6. M. M. Shahidul Hassan, Ziaur Rahman Khan and Md. Touhidur Rahman, “Base Transit Time of a Bipolar Transistor considering Field Dependent Mobility,” International Journal of Electronics, Vol. 93, No. 11, pp. 723-735 November 2006. 
  7. M. M. Shahidul Hassan, Touhidur Rahman and Md. Ziaur Rahman Khan,“Analytical model for base transit time of a bipolar transistor with Gaussian doped base,” Solid-State Electron.,Vol. 50, No. 3, pp. 327-332 , 2006. 
  8. Md. Anwarul Abedin and Dr. M. M. Shahidul Hassan, “Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” Journal of The Institution of Engineers, Singapore, Vol. 45, Issue 5, 2005. 
  9. Md. Anwarul, Abedin and M. M., Shahidul Hassan, Analytical base transit time model of uniformly doped base bipolar transistors considering Kirk effect, The Journal of the Institution of Engineers, Malaysia, vol. 66(3), 2005, pages 42-46. 
  10. Md. Z. R. and M.M.S. Hassan and T.Rahman and A. k. M. Ahsan, “Expression for Base Transit Time in Bipolar Transistors,” Int. J. Electronics, Vol. 92, No. 4, pp. 215-229, April 2005. 
  11. M. M. Shahidul Hassan , A. H. M. A. Rahim ,“Induced Base Transit Time of an Epitaxial n+ pnn + Bipolar Transistor in Saturation,” Solid-State Electronics,Vol. 47,No.6, pp. 943-950, 2003. 
  12. M. M. Shahidul Hassan,“Base Transit Time of an Epitaxial n+ pnn + Bipolar Transistor Considering Kirk Effect,” Int. J. Microelectronics and Reliability, Vol. 43, No. 2, pp. 327-332, 2003. 
  13. M. M. Shahidul Hassan and S. Hasibul Majid, “Electrical Characteristics of an Epitaxial Schottky Barrier Diode,” International Journal of Electronics, Vol. 88, No. 9, pp. 957- 967, 2001. 
  14. M. M. Shahidul Hassan and A. H. Khondoker, “New Expression for Base Transit Time in a Bipolar Transistor for all levels of Injection, ”Microelectronics and Reliability, Vol. 41, No. 1, pp. 137-140, 2001. 
  15. M. M. Shahidul Hassan, “Analytical Base Transit Time of Integrated Bipolar Transistors in Quasi-saturation and Hard-saturation,” IEE Proc.-Circuits, Devices and Systems, 147, No. 2, pp. 129-132, 2000. 
  16. M. M. Shahidul Hassan, “Characteristics of Epitaxial Schottky Barrier Diode for all Levels of Injection,” Solid-State Electronics, Vol. 44, No. 6, pp.1111-1116, 2000. 
  17. M. M. Shahidul Hassan, “Modelling of Lightly Doped Collector of a Bipolar Transistor Operating in Quasi-saturation Region,” Int. Journal of Electronics, Vol.86, No.1, pp. 1-14, 1999. 
  18. M. M. Shahidul Hassan and M. A. Choudhury, “New Formulation of the Collector Current and Current Gain Relations for Design Purposes of Power Transistors Switches,” IEE Proc. – Circuits, Devices and Systems, Vol. 142, No.2, pp. 113-119, 1995. 
  19. M. M. Shahidul Hassan and Md. Aynal Haque, “Evaluation of Optimal Collector Parameters of a Transistor with Burried Layer,” Int. J. Electronics, Vol. 75, No. 3, pp. 437-440, 1993. 
  20. M. M. Shahidul Hassan, Golam Rasul Chowdhury and Zahirul Alam,“Breakdown Voltage of High-Voltage Bipolar Transistors,” Solid-State Electronics, Vol. 34, No. 10, pp. 1109-1111, 1991. 
  21. M. M. Shahidul Hassan and H. Domingos, “Design of Optimal Values of Parameters of Epitaxial Bipolar Transistor Switches,” Int. J. Electronics (IJE), Vol. 71, No. 5, pp. 745-755, 1991. 
  22. M. M. Shahidul Hassan and A. Habib, “Avalanche Breakdown Voltages of Linearly Graded Si Junctions,” IJE Vol.71, No.3, pp. 403- 409, 1991. 
  23. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base-Collector Junctions of Medium- and Low -Voltage Graded Collector Transistors,” Int. J. Electronics, Vol. 70, No. 1, pp. 69-75, 1991. 
  24. M. M. Shahidul Hassan and H. Domingos, “Breakdown Voltages of Base Collector Junctions of High-Voltage Power Transistors with Graded Collectors,” Int. J. Electronics, Vol. 70, No. 1, pp. 77-83, 1991. 
  25. M. M. Shahidul Hassan and H. Domingos, “Control of Current Mode Second Breakdown in Transistors through Use of Double-Graded Collectors,” Solid-State Electronics, Vol. 33, No. 10, pp. 1217-1221, 1991. 
  26. M. M. Shahidul Hassan and H. Domingos, “Calculation of Avalanche Breakdown Voltages of Abrupt Si P-N Junctions,” Int. J. Electronics, Vol. 68, No. 4, pp. 533-537, 1990. 
  27. M. M. Shahidul Hassan and H. Domingos, “Estimate of Peak Voltage for Triggering Current Mode Second Breakdown of BJTs during Inductive Turnoff,” Int. J. Electronics,Vol. 66, No. 3, pp. 361-369, 1989. 
  28. M. M. Shahidul Hassan and H. Domingos, “Estimate of Minimum Current for Inducing Current Mode Second Breakdown in Reverse Biased Epitaxial Bipolar Transistors,” Int. J. Electronics, Vol. 66, No. 3, pp. 371-377, 1989. 
  29. M. M. Shahidul Hassan and H. Domingos, “Increase of Critical Current Density and Voltage for Triggering Avalanche Injection through Use of Graded Collector Doping,” Int. J. Microelectronics and Reliability, Vol. 29, No 2, pp. 217-226, 1989. 

Area : Higher Education

  1. M. M. Shahidul Hassan and Omiya Hassan, “The Importance of Changing the Traditional Mode of Higher Education in Bangladesh: Creating Huge Job Opportunities for Home and Abroad,”International Journal of Humanities and Social Sciences, Vol : 13, No:6, 2019. 
  2. M. M. Shahidul Hassan, “Revamping Higher Education in Bangladesh,” International Journal of Management and Applied Science (IJMAS) , pp. 53-55, Volume-2,Issue-12, 2017. 
  3. M M Shahidul Hassan, “ On Challenges of Implementing Outcome Based Engineering Education in Universities in Bangladesh”, JPU, 20-22 Dec. 2012, pp. 362 - 364 


National Journals 

Area: Electronic Devices

  1. Yeasir Arafat, Md. Jannatul Ferdous and M . M. Shahidul Hassan, “ Effect of Temperature on the Fill Factor of a Heterojunction (CIGS) Solar Cell,” JIEB, Vol. EE 38, No. 11, Dec.2012. 
  2. M M Shahidul Hassan, Orchi Hassan and Md. Azharul Haque, “Minority Carrier Profile and Storage Time of a Schottky Barrier Diode for All levels of injection,” JIEB, Vol 37, No 2, pp. 15-21, 2011. 
  3. Md.Waliullah Khan Nomani and M. M. Shahidul Hassan , “A New model of base transit time for BJTs operating at high level of injection,” JIEB, 2006. 
  4. M. M. Shahidul Hassan and M. Azharul Haque, “Base Transit Time of a High Speed NPN Transistor Considering Hole current,” JIEB, Vol. EE 33, No. 1& II, pp. 120-124, Decber 2006. 
  5. Touhidur Rahman, Md. Ziaur Rahman Khan, Hassan MMS, “Base Transit Time of a Bipolar Transistor with Gaussian Base Doping Profile", IEB Journal of Electrical Engineering, Vol. EE 31, No. I & II), pp. 6 - 9, Dec 2004 
  6. Md. Aynal Haque and M. M. Shahidul Hassan, “Design of a Graded Collector of High Voltage Bipolar Transistors,” JIEB, Vol. EE 27, No. 1, pp. 57-61, 1999. 
  7. Mohammad Zahangir Kabir and M. M. Shahidul Hassan, “Determination of Excited Energy States of Submicron Inversion MOSFETs by Variational Method,” JIEB, Vol. EE24, pp. 61-67, 1996. 
  8. Md. Nasim Ahmed Dewan and M. M. Shahidul Hassan, “Modeling of Bipolar Junction Transistor Thermal Effects,” JIEB, Vol. EE24, pp.19-26, 1996. 
  9. M. M. Shahidul Hassan and Md. Kamrul Hassan , “Dependence of Second Breakdown on Load Inductance and Reverse Base Drive,” JIEB, Vol. EE23, pp. 29-36, 1995. 
  10. Md. Tanvir Quddus and M. M. Shahidul Hassan, “Analytical Modelling of Breakdown in Short Channel MOSFET’s”, JIEB, Vol. EE 23, pp. 1-8, 1995. 
  11. M. M. Shahidul Hassan, “Optimum Design of Darlington Power Transistor Switches,” JIEB, Vol. 22, No. 1, pp. 215-222, 1994. 
  12. M. M. Shahidul Hassan and G.. R. Choudhury, “Effect of Doping on Efficiency of MIS Inversion Layer Solar Cells,"JIEB, Vol. 20, pp. 33-39, 1992. 
  13. M. M. Shahidul Hassan and M. A. Choudhury, “ A Model for Designing Power Transistor Switches Driven in Hard Saturation in its On-State,” JIEB, Vol. 20, No. 3, pp. 29-35, 1992. 
  14. M. M. Shahidul Hassan, M. M. Rahman and S. M. Sohel Imtiaz, “An Analytical Model for Current Mode Second Breakdown in Epitaxial Bipolar Transistor under Open-Base Operating Conditions,” JIEB, Vol. 18, pp. 23-34,1990. 
  15. M. M. Shahidul Hassan and M. A. Choudhury, “Effect of Low-High junction on the CurrentGain Product of High-Voltage Power Transistors Operating in Saturation Region,” JIEBS, Vol. 3, pp. 19-22, 1993. 
  16. M. M. Shahidul Hassan, “Evaluation of Optimal Values of Double-Graded Collector Parameters of High-Voltage Transistors,” JBES, Vol. 2, No. 1, pp. 37-40, 1992. 
  17. M. M. Shahidul Hassan and M. Sohel Imtiaz, “Current- Voltage Characteristics of a Reverse Biased Transistor Driven in Current Mode Second Breakdown,” JBES,Vol.1, No. 1, pp. 17-23, 1991. 
  18. M. M. Shahidul Hassan and Golam Rasul Chowdhury, “Doping Dependence of Current Mode Second Breakdown in Epitaxial Bipolar Transistor,” JBES,Vol. 1, No. 1, pp. 27-30, 1991.
Download [PDF]

International Conferences

  1. M M Shahidul Hassan and Orchi Hassan,“ Injection Ratio and Storage Time of a Nonuniformly Doped Schottky Barrier Diode.” International Conference on Electrical and Computer Engineering(ICECE), Dhaka, Bangladesh, pp. 127–130, Dec.18-20, 2012. 
  2. Md. Imran Momtaz and M. M. Shahidul Hassan, “Analytical expression for storage time And injection ratio of a non-uniformly doped n-Si SBD,” International Conference on Devices, Circuits and Systems (ICDCS – 2012), Karuny University, Coimbatore, India, March 15-16, 2012. 
  3. M. M. Shahidul Hassan, “Outcome Based Engineering Education: A paradigm shift,” ICECE 2012 Conference, Dhaka, Bangladesh 
  4. Chowdhury, M. I. B. and Hassan, M. M. Shahidul, “Analytical modeling of base transit time considering recombination in the non-uniformly doped base,”International Symposium on Humanities, Science & Engineering Research (SHUSER), Kuala Lampur, Malaysia, pp. 117 - 122, June 05-07, 2011. 
  5. Islam, S.M.M., Arafat, Y, Chowdhury, I.B., Khan, M.Z.R. and Hassan, M.M.S.,“Base transit time of a Heterojunction Bipolar Transistor with Gaussian doped Base,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 127 – 130, Dec. 18-20, 2010. 
  6. Chowdhury, M.I.B. and Hassan, M.M.S.,“Analysis of base transit time for a bipolar junction transistor considering base current,” International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 20 - 24 , Dec. 18-20, 2010. 
  7. Hassan, M.M.S. and Chowdhury, M.I.B., “Effect of majority carrier current on the base transit time of a BJT for exponential doping,” IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, pp. 1 – 4, Dec. 15-17, 2010. 
  8. Arafat, Y., Khan, M.Z.R., Hassan, M.M.S., “Analytical modeling of base transit time for a Si1-yGey heterojunction bipolar transistor,” Electron Devices and Solid-State Circuits, EDSSC 2009. IEEE International Conference , 25-27 Dec. 358 – 361, 2009. 
  9. Chowdhury, M.I.B. and Hassan, M.M.S. “Base transit time of a bipolar junction transistor considering majority-carrier current”, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, pp. 133 - 138 , Dec. 20-22, 2008. 
  10. Md. Ziaur Rahman Khan, M. M. Shahidul Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” Proceedings of the 15th International Conference on Microelectronics, ICM 2003, pp. 340 - 343, December 9 -11, 2003, Cairo, Egypt, ISBN number : 977-05-2010-1, IEEE Catalog number : 03EX686. 
  11. A New Technique for Determining Base Transit Time of a Bipolar Junction Transistor Electrical and Computer Engineering, International Conference on Electrical and Computer Engineering (ICECE), Dhaka, Bangladesh, 19-21 Dec. 56 – 59, 2006. 
  12. Touhidur Rahman, M. M. Shahidul Hassan and Md. Ziaur Rahman Khan,“Analytical Model for Base Transit Time of a Bipolar Transistor with Gaussian-Doped Base,” 3rd International Conference on Electrical & Computer Engineering ICECE 2004, pp. 478 – 481, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4. 
  13. M. M. Shahidul Hassan, Md. Ziaur Rahman Khan and Touhidur Rahman,“Analytical Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” 3rd International Conference on Electrical & Computer Engineering, ICECE 2004, pp. 482 – 485, Dhaka, Bangladesh, 28-30 December 2004, ISBN: 984-32-1804-4. 
  14. M. Z. Rahman Khan and M.M.S. Hassan and Touhidur Rahman, “New Expression for Base Transit Time in an Exponentially Doped Base Bipolar Transistor for All Levels of Injection,” proceedings of the 15th international conference for Microelectronics (ICM03), Cairo, Egypt, 9-11 December 2003, pp 340-343. 
  15. Md. Ziaur Rahman and M. M. S. Hassan, “Analytical Expression of Collector Current Density and Base Transit time in an Exponential Doped Base Bipolar Transistor for all levels of Injection,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 120-123. 
  16. M. M. Shahidul Hassan and Ashok Kumar Karmokar, “Diffusion Capacitance of an Epitaxial High Barrier Schottky Diode,” ICECE2002, 26-28 December 2002, Bangladesh, pp. 124-127. 
  17. Farseem M. Mohammedy and M. M. S. Hassan, “A Distributed Transmission Line Model for the Base Transit Time of a nonuniformly Doped Bipolar Junction Transistor,” ICECE2002, 26- 28 December 2002, Bangladesh, pp. 132-135. 
  18. M. A. Abedin and M. M. S. Hassan, “Analytical Base Transit Time Model of a Bipolar Junction Transistor Considering Kirk Effect,” IECE2002, 26-28, December 2002, Bangladesh, pp. 136-129. 
  19. M. M. Shahidul Hassan, “ Base Transit Time of a Bipolar Transistor Considering Field Dependent Mobility,” IEB Conference, pp. 102-106, October 23-25, 2002. 
  20. M. A. Abedin and M. M. Shahidul Hassan, “Analytical Base Transit Time Model of a Uniformly Doped Base Bipolar Transistors Considering Kirk Effect,” IEB Conference, pp. 65- 69, October 22-25, 2002. 
  21. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos, “ Conduction Mechanism in BJT’s during Electrical Overstress,” EOS/ESD Symposium Proc., USA, pp. 280-286, 1987. 
  22. D. J. Wilson, H. Domingos and M. M. Shahidul Hassan,“Electrical Overstress in NMOS Silicided Devices,” EOS/ESD Symposium Proc., USA, pp. 265-273, 1987. 
  23. M. M. Shahidul Hassan, A. N. Khondker and H. Domingos,“Effect of Graded California, USA, EOS/ESD Symposium Proc., pp.70-76,1988. 
  24. M. M. Shahidul Hassan and H. Domingos, “The Double Graded Transistor and Its Beneficial Effect on Resistance to Current Mode Second Breakdown,” EOS/ESD Symposium Proc., USA, pp. 127-135, 1989. 

Area : Higher Education

  1. M. M. Shahidul Hassan1 and Omiya Hassan, “Higher Education and Creation of Jobs in Bangladesh”, World Conference on Teaching and Education, Budapest, Hungary, October 18 – 20, 2019 , pp. 75-80. 
  2. M M Shahidul Hassan, “Revamping Higher Education in Bangladesh”, Proceedings of 53rd ISERD International Conference Zurich, Switzerland, 30th-31st October 2016, ISBN: 978-93- 86291-23-3 
  3. M M Shahidul Hassan,“National Framework for Engineering Education Delivery Models in South Asia”, Socio-int15- International Conference on Education Social Sciences and Humanities, Istambul, Turkey, 8-10 June 2015, pp19-25. 
  4. M M Shahidul Hassan,,”Challenges and Opportunities for Engineering Education in Bangladesh,” IEOM Symposium on Global Engineering Education, December 19, 2015, Dhaka, Bangladesh. 
  5. M. M. Shahidul Hassan, “Implementing Outcome Based Engineering Education in Bangladesh,” Advanced Education and Management [ICAEM2014], Jan 04 –Jan 06 2014, Beijing, China. 
  6. M. M. Shahidul Hassan, “Challenges of implementing outcome based engineering education in universities in Bangladesh,” 7th International Conference on Electrical and Computer. https://ieeexplore.ieee.org/abstract/document/6471562gineering, 2012. 
  7. M. M. Shahidul Hassan, “Outcome Based Engineering Education: A paradigm shift,” ICECE 2012 Conference, Dhaka, Bangladesh.
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The local daily newspapers 

  1. এম এম শহিদুল হাসান, "কোয়ালিফিকেশন ফ্রেমওয়ার্কঃ শিক্ষাক্ষেত্রে সাফল্য সূচক", সমকাল ১৬ মার্চ ২০২০  . https://samakal.com/todays-print-edition/tp-editorial-comments/article/200331952 
  2. M. M. Shahidul Hassan, “Set up a National Qualifications Framework,” The Daily Sun, 01 March 2020. https://www.daily-sun.com/post/465965/Set-up-a-National-Qualifications-Framework 
  3. M. M. Shahidul Hassan, “Problems of Teaching-learning Process at Tertiary Level,” The Daily Sun, 9 February 2020. https://www.daily-sun.com/post/460664/Problems-of-Teachinglearning-Process-at-TertiaryLevel 
  4. M. M. Shahidul Hassan, “Low Student Teacher Ratio: A Path to Quality Teaching,” The Daily Sun, 2 February 2020. https://www.daily-sun.com/printversion/details/458638/Low-Student-Teacher-Ratio:-A-Path-toQuality-Teaching 
  5. এম এম শহিদুল হাসান, “বাংলাদেরে উ”চশিক্ষার সমস্যা ও সমাধান,” দৈনিক যুগান্তর, ১৫ জানয়ারী ২০২০. https://epaper.jugantor.com/2020/01/15/ 
  6. M. M. Shahidul Hassan, “Expectations from Universities, ” The Daily Sun, 28 December 2019. https://www.daily-sun.com/amp/post/450015 
  7. M. M. Shahidul Hassan, “Assessment in university courses must be innovative, realistic and relevant,” TheDail Star, 11 December, 2019. https://www.thedailystar.net/opinion/education/news/assessment-university-courses-must-beinnovative-realistic-and-relevant-1838530 
  8. M. M. Shahidul Hassan, “Why knowledge-based economies are richer, ” The Daily Star, 19 November 2019. https://www.thedailystar.net/opinion/education-0/news/why-knowledge-based-economies-arericher-1828825 
  9. M. M. Shahidul Hassan, “Strategy for Higher Education in Bangladesh, ” The daily Sun, 24 October, 2019, 9 th Anniversary Special Supplemen. https://www.daily-sun.com/printversion/details/433642/Strategy-for-Higher-EducationinBangladesh 
  10. M. M. Shahidul Hassan, “Teaching According to How Students Learn, ”The daily Sun, 23 August, 2019. https://www.daily-sun.com/printversion/details/417390/2019/08/23/Teaching-According-toHow-Students-Learn 
  11. M. M. Shahidul Hassan, “Research universities can light the way for tomorrow’s Bangladesh , ”The daily Star, 03 July, 2019. https://www.thedailystar.net/opinion/education/news/research-universities-can-light-the-waytomorrows-bangladesh-1765696 
  12. M. M. Shahidul Hassan, “ How universities can improve student satisfaction and quality of learning , ”The daily Star, 11 March, 2019 https://www.thedailystar.net/opinion/education/news/how-universities-can-improve studentsatisfaction-and-quality-learning-1755004 
  13. M. M. Shahidul Hassan, “University expansion in Bangladesh will change lives for the better ,” The daily Sun, June 2019. https://www.daily-sun.com/printversion/details/396959/2019/06/02/University-Expansion-inBangladesh-Will-Change-Lives-for-the-Better 
  14. M. M. Shahidul Hassan, “The role of universities in developing SMEs,” The Daily Star, 31 December 2019. https://www.thedailystar.net/opinion/education/news/the-role-universities-developing-smes1722517 
  15. M. M. Shahidul Hassan, “SME-University Collaborations for Boosting Innovation,” The daily Sun, 28 March 2019. https://www.dailysun.com/printversion/details/380802/2019/03/28/SMEUniversityCollaborations-for-Boosting-Innovation
  16. M. M. Shahidul Hassan, “Creating a generation of learners and innovators,” Friday, The daily Star, 01 March, 2019. https://www.thedailystar.net/opinion/news/creating-generation-learners-and-innovators-1708666 
  17. M. M. Shahidul Hassan, “Rethinking Engineering Education in Bangladesh,” Monday, The daily Star, 11 February, 2019. https://www.thedailystar.net/opinion/education/news/rethinking-engineering-educationbangladesh-1700230 
  18. M. M. Shahidul Hassan, “গড়তে হবে চিন্তা স্কুল,” যুগান্তর,০৩ ফেব্রæয়ারী ২০১৯. https://www.jugantor.com/todayspaper/window/140504/গড়তে-হবে-চিন্তা-স্কুল
  19. M. M. Shahidul Hassan, “ A new Laerning Paradigm,” Thursday, The daily Star, 17 Januray 2019. https://www.thedailystar.net/opinion/education/news/new-learning-paradigm-1688410 
  20. M. M. Shahidul Hassan, “Outcomes-Based Education: New Learning Paradigm,” Thursday, 17 Januray 2019, The daily Sun. https://www.edailysun.com/arc/next_page/2019-01-17/6#tab1 
  21. M. M. Shahidul Hassan, “Making Education Fit for 21st Century,” Monday, The daily Sun, 12 November, 2018. https://www.dailysun.com/printversion/details/349604/2018/11/12/Making-Education-Fit-for21st-Century. 
  22. M. M. Shahidul Hassan, “Thinking School: A catalyst for transformational change in education, ” 'The Daily Star, Tuesday, Nov. 7, 2018. https://www.thedailystar.net/opinion/education/news/thinking-school-catalyst-transformationalchange-education-1657018 
  23. M. M. Shahidul Hassan, “Education Responses to SDG4: Bangladesh Perspective,” the Daily Sun, Wednesday day, October 24, 2018. http://www.daily-sun.com/post/345193/2018/10/23/Education-Responses-to-SDG4:-BangladeshPerspective. 
  24. M. M. Shahidul Hassan, “ Academic Credit Hours: What to Know, ” the Daily Sun, Thursday day, March 15, 2018. http://www.daily-sun.com/arcprint/details/295268/Academic-Credit-Hours:-What-toKnow/2018-03-15. 
  25. M. M. Shahidul Hassan, “ Some thoughts on university grading systems, ” the Daily Star, Opinion Section, Wednesday day, February 14, 2018. 
  26. M. M. Shahidul Hassan, “What's in an academic calendar?, ” the Daily Star, Opinion Section, Tuesday, February 06, 2018. 
  27. M. M. Shahidul Hassan, “Chronicle of Higher Education,” the Daily Star, 28 June, 2018. http://www.daily-sun.com/home/printnews/318193 
  28. এম এম শহিদুল হাসান, “বিশ^বিদ্যালয় শিক্ষায় যে পরিবর্তন কাম্য,” সমকাল, ২৩ নভেম্বর ২০১৭, http://epaper.samakal.com/nogor-edition/2017-11-23/9. 
  29. M. M. Shahidul Hassan, “Role of universities in today’s society,” the daily Sun, Thuesday, 24 October 2017. http://www.daily-sun.com/arcprint/details/263754/2017/10/24/Role-of-Universities-inToday%E2%80%99s-Society/2017-10-24. 
  30. M. M. Shahidul Hassan, “Preventing Dropout from Higher Education: Bangladesh Perspective,” the daily Sun, pp.6, Thursday, 27 July 2017. http://www.daily-sun.com/home/printnews/243524. 
  31. M. M. Shahidul Hassan, “Qulity in Higher Education: Bangladesh Perspective,” the daily Sun, pp.6, Sunday, 16 July 2017. http://www.daily-sun.com/home/printnews/240883. 
  32. M. M. Shahidul Hassan, “Teaching and Learning in Universities: Bangladesh Perspective,” the daily Sun, Sunday, 2 July 2017. http://www.daily-sun.com/arcprint/details/237379/Teaching-and-Learning-in-Universities:- Bangladesh-Perspective/2017-07-02 
  33. M. M. Shahidul Hassan, “Revamping Our Higher Education,” the daily Sun, Sunday, 1 July 2016. http://www.daily-sun.com/home/printnews/148663 
  34. M. M. Shahidul Hassan, “How can we build a knowledge-based economy? ,” the Daily Star, Opinion Section, Friday, January 6, 2017. 
  35. M. M. Shahidul Hassan, “Global Perspectives on Higher Education in Bangladesh,” The Daily Sun, p-6, Wednesday, 8 June, 2016. http://www.dailysun.com/printversion/details/142418. 
  36. M. M. Shahidul Hassan, “Redesigning Higher Education Curriculum to Meet International Standards,” The Daily Sun, Thursday, 3 June, 2016. http://www.daily-sun.com/home/printnews/141013. 
  37. এম এম শহিদুল হাসান, “হশক্ষা োহিকুলাম প্রণয়ন আন্তর্জ াহিক মাননর সনে সামঞ্জসযপূর্জিনি িনে,” cÖ_g Av‡jv, ১২ মম, ২০১৬. 
  38. M. M. Shahidul Hassan, “Higher Education and Economic Growth in Our Context,”The Daily Sun, 23 October, 2016. http://www.daily-sun.com/magazine/details/177464/Higher-Education-and-Economic-Growthin-Our-Context/2016-10-23. 
  39. M. M. Shahidul Hassan, “BUET’s contribution to engineering education,” The Guardian, July 16, 2015. http://www.theguardianbd.com/buets-contribution-to-engineering-education/ 
  40. M. Shahidul Hassan, “Towards harmonisation of higher education in South Asian,” Campis Chronicle, The New Nation, 21 July 2013. 
  41. M. M. Shahidul Hassan, “Outcome based education: Challenges in implementation,” The Daily Sun, Saturday 12 January 2013. 
  42. M. M. Shahidul Hassan, Outcome based Engineering education : A paradigm shift,” The New Nation, Monday, 01 October, 2012. 
  43. M M. Shahidul Hassan, “Outcome-based education: Learning's new paradigm,” The Independent, 07 August 2012. 
  44. M. M. Shahidul Hassan, “A homogenous system for South Asian higher education, ” BD Cronice, OP-ED, 8 July 2013 http://www.bdchronicle.com/outlook/opeddetail/29 
  45. Professor M M Shahidul Hassan, “ Providing Quality Engineering Education,” Nation, Friday, 12 June 2009. 
  46. এম এম শহিদুল হাসান,“ তরুন প্রজন্মের বড় অংশ প্রকৌশল শিক্ষা নিতে আগ্রহী,” জনকন্ঠ, বাংলাদেশ, ৩০ মার্চ ২০০৯


Others: 

  1. অধ্যাপক এম এম শহিদুল হাসান,“প্রাণের সুরটি মেলাতে,” souvenir  প্রানের নিকেতন, BUET Alumni Grand Reunion 2019. 
  2. অধ্যাপক এম এম শহিদুল হাসান,“অস্তাচলের সূর্যের বিচ্ছুরিত আভা” souvenir, BUET Alumni Grand Reunion 2018. 
  3. অধ্যাপক এম এম শহিদুল হাসান,“চলতে হবে সামনে,” souvenir, BUET Alumni Grand Reunion 2017. 
  4. অধ্যাপক এম এম শহিদুল হাসান,“বুয়েট ও আমি,” souvenir, BUET Alumni Grand Reunion 2016. 
  5. M. M. Shahidul Hassan, “Quality Education: Our Goal, Our Commitment,” Association of BUET Alumni News Latter, 1st sissue, Jan. 2016. 
  6. অধ্যাপক এম এম শহিদুল হাসান,“প্রাপ্তি ও অপ্রাপ্তি,”souvenir, BUET Alumni Grand Reunion 2015. 
  7. অধ্যাপক এম এম শহিদুল হাসান,“পিছনে ফিরে দেখা ও সামনে তাকানো,” souvenir, BUET Alumni Grand Reunion 2014. 
  8. অধ্যাপক এম এম শহিদুল হাসান, “বুয়েটকে নিয়ে চিন্তা ভাবনা,” souvenir, BUET Alumni Grand Reunion 2013. 
  9. অধ্যাপক এম এম শহিদুল হাসান,“যুগোপযোগি শিক্ষা পদ্ধতি প্রবর্তনে সমস্যা ও বাাঁধা ,” Prova, BUET Teacher’s association, 2015. 
  10. অধ্যাপক এম এম শহিদুল হাসান,“পাশ্চাত্যের বিশ্ববিদ্যালয় ও আমাদের বুয়েট,” Prova, BUET Teacher’s association, 2014. 
  11. অধ্যাপক এম এম শহিদুল হাসান, “ নতুন প্রজন্মের কাছে প্রত্যাশা,” নবীন বিজ্ঞানী, বিজ্ঞানবিষয়ক সাময়িকী,জাতীয় বিজ্ঞান ও প্রযুক্তি জাদুঘর, সুবর্ণ জয়ন্তী, ২৬ এপ্রিল,২০১৭. 
  12. অধ্যাপক এম এম শহিদুল হাসান, “ পরশ পাথর,” Magazine, BUET Teachers’ Associatio, 1981. 
  13. এম এম শহিদুল হাসান, “ আমেরিকার বিশ্ববিদ্যালযে পড়ানোর অভিজ্ঞতা,” নয়া দিগন্ত, ৪ জুলাই ২০০৯.
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